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RUTHENIUM OXIDE METAL NANOCRYSTAL CAPACITORS WITH HIGH-k DIELECTRIC TUNNELLING BARRIERS FOR NANOSCALE NONVOLATILE MEMORY DEVICE APPLICATIONS

Das, A ; Maikap, S ; Lin, C-H ; Tzeng, P-J ; Tien, T-C ; Wang, T-Y ; Chang, L-B ; Yang, J-R ; Tsai, M-J

Microelectronic engineering, 2010-01, Vol.87 (10), p.1821-1827 [Periódico revisado por pares]

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  • Título:
    RUTHENIUM OXIDE METAL NANOCRYSTAL CAPACITORS WITH HIGH-k DIELECTRIC TUNNELLING BARRIERS FOR NANOSCALE NONVOLATILE MEMORY DEVICE APPLICATIONS
  • Autor: Das, A ; Maikap, S ; Lin, C-H ; Tzeng, P-J ; Tien, T-C ; Wang, T-Y ; Chang, L-B ; Yang, J-R ; Tsai, M-J
  • Assuntos: Capacitors ; Electric potential ; Hafnium oxide ; Nanocrystals ; Nanostructure ; Ruthenium oxide ; Tunnelling ; Voltage
  • É parte de: Microelectronic engineering, 2010-01, Vol.87 (10), p.1821-1827
  • Notas: ObjectType-Article-1
    SourceType-Scholarly Journals-1
    content type line 23
    ObjectType-Feature-2
  • Descrição: Ruthenium oxide metal nanocrystals embedded in high-k HfO2/Al2O3 dielectric tunnelling barriers prepared by atomic layer deposition in n-Si/SiO2/HfO2/ruthenium oxide (RuOx)/Al2O3/Pt memory capacitors with a small equivalent oxide thickness of 8.6 plus or minus 0.5 nm were investigated. The RuOx metal nanocrystals in a memory capacitor structure observed by HRTEM had a small average diameter of about 7 nm with a high density of > 1.0 x 10 exp(12)/cm2 and thickness of about 3 nm. Ruthenium oxide nanocrystals having RuO2 and RuO3 elements were confirmed by XPS. Enhanced memory characteristics such as a large memory window of DeltaV about 12.2 V at a sweeping gate voltage of plus or minus 10 V and DeltaV about 5.2 V at a small sweeping gate voltage of plus or minus 5 V, highly uniform and reproducible, a large electron (or hole) storage density of about 1 x 10 exp(13)/cm2, low charge loss of < 7% (DeltaV about 4.2 V) after about 10 exp(4) s of retention time due to the formation of RuOx nanocrystals after the annealing treatment and design of the memory structure were seen. The charge storage in the RuOx nanocrystals under a small voltage operation (about 5 V) was due to the modified Fowler-Nordheim tunnelling mechanism. This memory structure can be useful for future nanoscale nonvolatile memory device applications.
  • Idioma: Inglês
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  • Realização: ABCD-USP USP   Logos de Redes Sociais: Freepik

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