1.3 μm gain coupled DFB laser with InGaAlAs MQW grown on absorptive InGaAsP corrugation
FENG, W ; PAN, J. Q ; WANG, L ; LIAO, Z. Y ; CHENG, Y. B ; CHEN, D. B ; ZHAO, L. J ; ZHU, H. L ; WANG, W
Semiconductor science and technology, 2007-08, Vol.22 (8), p.859-862 [Periódico revisado por pares]Bristol: Institute of Physics
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