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0.1-Micrometer scaling by 1:1 synchrotron radiation lithography

Mochiji, K ; Ogawa, T ; Oizumil, H ; Soga, T

Microelectronic engineering, 1992-11, Vol.18 (4), p.333-340 [Periódico revisado por pares]

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Título:
0.1-Micrometer scaling by 1:1 synchrotron radiation lithography
Autor: Mochiji, K ; Ogawa, T ; Oizumil, H ; Soga, T
Assuntos: 1:1 Proximity printing ; Applied sciences ; Electronics ; Engineering ; Engineering, Electrical & Electronic ; Exact sciences and technology ; Microelectronic fabrication (materials and surfaces technology) ; Nanoscience & Nanotechnology ; Optics ; Physical Sciences ; Physics ; Physics, Applied ; Science & Technology ; Science & Technology - Other Topics ; Secondary electron ; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices ; Stress ; Synchrotron radiation ; Technology ; X-ray diffraction ; X-ray lithography ; X-ray mask
É parte de: Microelectronic engineering, 1992-11, Vol.18 (4), p.333-340
Descrição: The dimensional accuracy of an X-ray mask and resolution capability of 1:1 SR (synchrotron radiation) lithography for 0.1-μm scaling are studied. The mask-to-mask overlay error is minimized below the measurement accuracy (0.04 μm, 3σ) by controlling the stress of the SiN membrane and the W absorber. 1:1 SR proximity printing is capable of 0.1-μm resolution by adjusting the exposing SR wavelength just over the Si-K edge and reducing the mask-wafer gap to 10 μm.
Editor: AMSTERDAM: Elsevier B.V
Idioma: Inglês

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