(001) and (11n)n = 1,3 GaAs substrate orientations for growth of GaN layers by AP-MOVPE: impact of GaN buffer layer thickness

Laifi, J. ; Bchetnia, A.

Journal of materials science. Materials in electronics, 2022-04, Vol.33 (10), p.7587-7597 [Periódico revisado por pares]

New York: Springer US

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