0.25 μm fully depleted SOI MOSFETs for RF mixed analog-digital circuits, including a comparison with partially depleted devices with relation to high frequency noise parameters

Vanmackelberg, M ; Raynaud, C ; Faynot, O ; Pelloie, J.-L ; Tabone, C ; Grouillet, A ; Martin, F ; Dambrine, G ; Picheta, L ; Mackowiak, E ; Llinares, P ; Sevenhans, J ; Compagne, E ; Fletcher, G ; Flandre, D ; Dessard, V ; Vanhoenacker, D ; Raskin, J.-P

Solid-state electronics, 2002-03, Vol.46 (3), p.379-386 [Periódico revisado por pares]

Elsevier Ltd

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