Investigation and reduction of RF loss induced by Al diffusion at the AlN/Si(111) interface in GaN-based HEMT buffer stacks

Mauder, C ; Hahn, H ; Marx, M ; Gao, Z ; Oligschlaeger, R ; Zweipfennig, T ; Noculak, A ; Negra, R ; Kalisch, H ; Vescan, A ; Heuken, M

Semiconductor science and technology, 2021-07, Vol.36 (7), p.75008 [Periódico revisado por pares]

IOP Publishing

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