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Impact of nitrogen impurities on the tungsten properties for application in spintronic

Gómez, Javier E. ; Haberkorn, Néstor

Applied physics. A, Materials science & processing, 2023-06, Vol.129 (6), Article 409 [Periódico revisado por pares]

Berlin/Heidelberg: Springer Berlin Heidelberg

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Título:
Impact of nitrogen impurities on the tungsten properties for application in spintronic
Autor: Gómez, Javier E. ; Haberkorn, Néstor
Assuntos: Applied physics ; Argon ; Characterization and Evaluation of Materials ; Condensed Matter Physics ; Crystal structure ; Electrical properties ; Ferromagnetic resonance ; Ferromagnetism ; Ferrous alloys ; Hall effect ; Machines ; Magnetic alloys ; Manufacturing ; Materials science ; Nanotechnology ; Nitrogen ; Optical and Electronic Materials ; Physics ; Physics and Astronomy ; Processes ; Spintronics ; Structural analysis ; Surfaces and Interfaces ; Thin Films ; Transport properties ; Tungsten
É parte de: Applied physics. A, Materials science & processing, 2023-06, Vol.129 (6), Article 409
Descrição: We report the impact of the tungsten crystal structure on the spin transport properties of permalloy/tungsten bilayers grown by sputtering on (100) silicon. The microstructure of the tungsten layer was modified using a reactive N 2 /argon mixture during the fabrication process. The analysis combines ferromagnetic resonance and inverse spin Hall effect (ISHE) experiments. A correlation with the electrical and structural characterization indicates that an initial β -W stabilization notably improves the measured ISHE signal. Nevertheless a subsequent increment of the N 2 pressure degrades the signal, probably due to higher interstitial nitrogen and degradation of the interface quality. The interplay between the resistivity and disorder gives an optimal growth condition to enhance the tungsten spin current sensing property.
Editor: Berlin/Heidelberg: Springer Berlin Heidelberg
Idioma: Inglês

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Impact of nitrogen impurities on the tungsten properties for application in spintronic

Gómez, Javier E. ; Haberkorn, Néstor

Berlin/Heidelberg: Springer Berlin Heidelberg

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