Idioma:

Gadolinium scandate as an alternative gate dielectric in field effect transistors on conventional and strained silicon

Roeckerath, M. ; Lopes, J. M. J. ; Durğun Özben, E. ; Sandow, C. ; Lenk, S. ; Heeg, T. ; Schubert, J. ; Mantl, S.

Applied physics. A, Materials science & processing, 2009-03, Vol.94 (3), p.521-524 [Periódico revisado por pares]

Berlin/Heidelberg: Springer-Verlag

Texto completo disponível

Citações Citado por

Enviar para

Título:
Gadolinium scandate as an alternative gate dielectric in field effect transistors on conventional and strained silicon
Autor: Roeckerath, M. ; Lopes, J. M. J. ; Durğun Özben, E. ; Sandow, C. ; Lenk, S. ; Heeg, T. ; Schubert, J. ; Mantl, S.
Assuntos: Applied sciences ; Channels ; Characterization and Evaluation of Materials ; Condensed Matter Physics ; Dielectrics ; Electronics ; Exact sciences and technology ; Field effect transistors ; Gadolinium ; Gates ; Machines ; Manufacturing ; Nanotechnology ; Optical and Electronic Materials ; Physics ; Physics and Astronomy ; Processes ; Rapid Communication ; Semiconductor devices ; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices ; Silicon substrates ; Slopes ; Surfaces and Interfaces ; Thin Films ; Transistors
É parte de: Applied physics. A, Materials science & processing, 2009-03, Vol.94 (3), p.521-524
Notas: ObjectType-Article-1
SourceType-Scholarly Journals-1
ObjectType-Feature-2
content type line 23
Descrição: Long channel n-type metal oxide semiconductor field effect transistors on thin conventional and strained silicon on insulator substrates have been prepared by integrating gadolinium scandate as high- κ gate dielectric in a gate last process. The GdScO 3 films were deposited by electron beam evaporation and subsequently annealed in oxygen atmosphere. Electrical characterization of readily processed devices reveals well behaved output and transfer characteristics with high I on / I off ratios of 10 6 –10 8 , and steep inverse subthreshold slopes down to 66 mV/dec. Carrier mobilities of 155 cm 2 /Vs for the conventional and 366 cm 2 /Vs for the strained silicon substrates were determined.
Editor: Berlin/Heidelberg: Springer-Verlag
Idioma: Inglês

Links

View record in Pascal Francis

Voltar para lista de resultados

Anterior Resultado 5 Avançar Ir para próxima página

Realização: Logos de Redes Sociais:

Gadolinium scandate as an alternative gate dielectric in field effect transistors on conventional and strained silicon

Roeckerath, M. ; Lopes, J. M. J. ; Durğun Özben, E. ; Sandow, C. ; Lenk, S. ; Heeg, T. ; Schubert, J. ; Mantl, S.

Berlin/Heidelberg: Springer-Verlag

Buscando em bases de dados remotas. Favor aguardar.