Gadolinium scandate as an alternative gate dielectric in field effect transistors on conventional and strained silicon
Roeckerath, M. ; Lopes, J. M. J. ; Durğun Özben, E. ; Sandow, C. ; Lenk, S. ; Heeg, T. ; Schubert, J. ; Mantl, S.
Applied physics. A, Materials science & processing, 2009-03, Vol.94 (3), p.521-524 [Periódico revisado por pares]Berlin/Heidelberg: Springer-Verlag
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