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Effects of AlGaAs cladding layers on the luminescence of GaAs/GaAs1−xBix/GaAs heterostructures

Mazur, Yu I ; Dorogan, V G ; de Souza, L D ; Fan, D ; Benamara, M ; Schmidbauer, M ; Ware, M E ; Tarasov, G G ; Yu, S-Q ; Marques, G E ; Salamo, G J

Nanotechnology, 2014-01, Vol.25 (3), p.035702-035702 [Periódico revisado por pares]

Bristol: IOP Publishing

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Título:
Effects of AlGaAs cladding layers on the luminescence of GaAs/GaAs1−xBix/GaAs heterostructures
Autor: Mazur, Yu I ; Dorogan, V G ; de Souza, L D ; Fan, D ; Benamara, M ; Schmidbauer, M ; Ware, M E ; Tarasov, G G ; Yu, S-Q ; Marques, G E ; Salamo, G J
Assuntos: cladding layers ; Condensed matter: electronic structure, electrical, magnetic, and optical properties ; Cross-disciplinary physics: materials science; rheology ; Electron states ; Exact sciences and technology ; Excitons and related phenomena ; GaAsBi heterostructures ; Materials science ; Nanocrystalline materials ; Nanoscale materials and structures: fabrication and characterization ; Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation ; Optical properties of low-dimensional, mesoscopic, and nanoscale materials and structures ; photoluminescence ; Physics ; Quantum wells
É parte de: Nanotechnology, 2014-01, Vol.25 (3), p.035702-035702
Notas: NANO-100636.R1
ObjectType-Article-1
SourceType-Scholarly Journals-1
ObjectType-Feature-2
content type line 23
Descrição: The structural and optical properties of GaAs1−xBix quantum wells (QWs) symmetrically clad by GaAs barriers with and without additional confining AlGaAs layers are studied. It is shown that a GaAs/GaAs1−xBix/GaAs QW with x ∼ 4% and well width of ∼4 nm grown by molecular beam epitaxy demonstrates efficient photoluminescence (PL) that becomes significantly more thermally stable when a cladding AlGaAs layer is added to the QW structure. The PL behavior for temperatures between 10 and 300 K and for excitation intensities varying by seven orders of magnitude can be well described in terms of the dynamics of excitons including carrier capture in the QW layer, thermal emission and diffusion into the cladding barriers. Understanding the role of these processes in the luminescence of dilute GaAs1−xBix QW structures facilitates the creation of highly efficient devices with reduced thermal sensitivity and low threshold current.
Editor: Bristol: IOP Publishing
Idioma: Inglês

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Effects of AlGaAs cladding layers on the luminescence of GaAs/GaAs1−xBix/GaAs heterostructures

Mazur, Yu I ; Dorogan, V G ; de Souza, L D ; Fan, D ; Benamara, M ; Schmidbauer, M ; Ware, M E ; Tarasov, G G ; Yu, S-Q ; Marques, G E ; Salamo, G J

Bristol: IOP Publishing

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