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Suppression of phonon heat conduction in cross-section-modulated nanowires

Nika, D. L. ; Cocemasov, A. I. ; Isacova, C. I. ; Balandin, A. A. ; Fomin, V. M. ; Schmidt, O. G.

Physical review. B, Condensed matter and materials physics, 2012-05, Vol.85 (20), Article 205439 [Periódico revisado por pares]

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  • Título:
    Suppression of phonon heat conduction in cross-section-modulated nanowires
  • Autor: Nika, D. L. ; Cocemasov, A. I. ; Isacova, C. I. ; Balandin, A. A. ; Fomin, V. M. ; Schmidt, O. G.
  • Assuntos: Boltzmann transport equation ; Cross sections ; Cross sections (physics) ; Heat transfer ; Mathematical analysis ; Mathematical models ; Nanowires ; Phonons ; Silicon
  • É parte de: Physical review. B, Condensed matter and materials physics, 2012-05, Vol.85 (20), Article 205439
  • Notas: ObjectType-Article-1
    SourceType-Scholarly Journals-1
    ObjectType-Feature-2
    content type line 23
  • Descrição: We have theoretically demonstrated that phonon heat flux can be significantly suppressed in Si and Si/SiO sub(2) nanowires with the periodically modulated cross-section area-referred to as the cross-section-modulated nanowires-in comparison with the generic uniform cross-section nanowires. The phonon energy spectra were obtained using the five-parameter Born-von Karman-type model and the face-centered-cubic cell model for description of the lattice dynamics. The thermal flux and thermal conductivity in Si and Si/SiO sub(2) cross-section-modulated nanowires were calculated from the Boltzmann transport equation within the relaxation time approximation. Redistribution of the phonon energy spectra in the cross-section-modulated nanowires leads to a strong decrease of the average phonon group velocities and a corresponding suppression of the phonon thermal flux in these nanowires as compared to the generic nanowires. This effect is explained by the exclusion of the phonon modes trapped in cross-section-modulated nanowires segments from the heat flow. As a result, a three- to sevenfold drop of the phonon heat flux in the 50- to 400-K temperature range is predicted for Si and Si/SiO sub(2) cross-section-modulated nanowires under consideration. The obtained results indicate that cross-section-modulated nanowires are promising candidates for thermoelectric applications.
  • Idioma: Inglês
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  • Realização: ABCD-USP USP   Logos de Redes Sociais: Freepik

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