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Ion-mixed Zr/ceramics interfaces — XPS study

Noda, Shoji ; Dohmae, Kazuhiko ; Doi, Haruo ; Kamigaito, Osami

Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 1989-03, Vol.39 (1), p.684-688 [Periódico revisado por pares]

Elsevier B.V

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  • Título:
    Ion-mixed Zr/ceramics interfaces — XPS study
  • Autor: Noda, Shoji ; Dohmae, Kazuhiko ; Doi, Haruo ; Kamigaito, Osami
  • É parte de: Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 1989-03, Vol.39 (1), p.684-688
  • Descrição: Zr thin films (100 nm) were vacuum-deposited on SiC single crystals and silica glass, and these specimens were irradiated with 80 keV N + ions to a dose of 1 × 10 17/cm 2 at about 100 K. RBS showed that an interdiffusion layer of about 7 nm thickness was formed around the interface between the Zr film and the SiC or the SiO 2. XPS studies demonstrated that the N + implantations generate chemical bonds like ZrSi, ZrC, and ZrOSi in the intermixed layer.
  • Editor: Elsevier B.V
  • Idioma: Inglês
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  • Realização: ABCD-USP USP   Logos de Redes Sociais: Freepik

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