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Black Arsenic-Phosphorus: Layered Anisotropic Infrared Semiconductors with Highly Tunable Compositions and Properties

Liu, Bilu ; Köpf, Marianne ; Abbas, Ahmad N. ; Wang, Xiaomu ; Guo, Qiushi ; Jia, Yichen ; Xia, Fengnian ; Weihrich, Richard ; Bachhuber, Frederik ; Pielnhofer, Florian ; Wang, Han ; Dhall, Rohan ; Cronin, Stephen B. ; Ge, Mingyuan ; Fang, Xin ; Nilges, Tom ; Zhou, Chongwu

Advanced materials (Weinheim), 2015-08, Vol.27 (30), p.4423-4429 [Periódico revisado por pares]

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Título:
Black Arsenic-Phosphorus: Layered Anisotropic Infrared Semiconductors with Highly Tunable Compositions and Properties
Autor: Liu, Bilu ; Köpf, Marianne ; Abbas, Ahmad N. ; Wang, Xiaomu ; Guo, Qiushi ; Jia, Yichen ; Xia, Fengnian ; Weihrich, Richard ; Bachhuber, Frederik ; Pielnhofer, Florian ; Wang, Han ; Dhall, Rohan ; Cronin, Stephen B. ; Ge, Mingyuan ; Fang, Xin ; Nilges, Tom ; Zhou, Chongwu
Assuntos: anisotropic ; Anisotropy ; Arsenic ; band gaps ; black arsenic ; black phosphorus ; Electronics ; Energy gaps (solid state) ; Infrared ; Infrared absorption ; infrared semiconductors ; layered materials ; Optical properties ; Semiconductors
É parte de: Advanced materials (Weinheim), 2015-08, Vol.27 (30), p.4423-4429
Notas: istex:170027CAFC6708EBB6F7FC8944107D96B6E46E07
ArticleID:ADMA201501758
ark:/67375/WNG-8V14QXPM-S
ObjectType-Article-1
SourceType-Scholarly Journals-1
ObjectType-Feature-2
content type line 23
Descrição: New layered anisotropic infrared semiconductors, black arsenic–phosphorus (b‐AsP), with highly tunable chemical compositions and electronic and optical properties are introduced. Transport and infrared absorption studies demonstrate the semiconducting nature of b‐AsP with tunable bandgaps, ranging from 0.3 to 0.15 eV. These bandgaps fall into the long‐wavelength infrared regime and cannot be readily reached by other layered materials.
Editor: Germany: Blackwell Publishing Ltd
Idioma: Inglês

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