Self-trapping in B-doped amorphous Si: Intrinsic origin of low acceptor efficiency

Santos, I. ; Castrillo, P. ; Windl, W. ; Drabold, D. A. ; Pelaz, L. ; Marqués, L. A.

Physical review. B, Condensed matter and materials physics, 2010-01, Vol.81 (3), Article 033203 [Periódico revisado por pares]

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