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Optical absorption and band gap shift of n-doped AlxGa1−xAs alloys grown by MBE

Ferreira da Silva, A. ; Persson, C. ; Berggren, K.-F. ; Pepe, I. ; Santos Alves, A. ; de Oliveira, A.G.

Microelectronic engineering, 1998-08, Vol.43-44, p.423-429 [Peer Reviewed Journal]

Amsterdam: Elsevier B.V

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Title:
Optical absorption and band gap shift of n-doped AlxGa1−xAs alloys grown by MBE
Author: Ferreira da Silva, A. ; Persson, C. ; Berggren, K.-F. ; Pepe, I. ; Santos Alves, A. ; de Oliveira, A.G.
Subjects: Applied sciences ; Band gap energy ; Condensed matter: electronic structure, electrical, magnetic, and optical properties ; Design. Technologies. Operation analysis. Testing ; Doped AlGaAs alloys ; Electrical properties of specific thin films ; Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures ; Electronics ; Exact sciences and technology ; Iii-v semiconductors ; Integrated circuits ; Molecular beam epitaxy ; Photoacoustic spectroscopy ; Physics ; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Is Part Of: Microelectronic engineering, 1998-08, Vol.43-44, p.423-429
Description: We have investigated the band gap shift of Si-doped AlxGa1−xAs alloys as a function of both silicon concentration and Al composition. Correlation and impurity scattering effects were included in the theoretical model. The optical absorption of Al0.3Ga0.7As:Si at the fundamental band gap energy has been measured by a photoacoustic spectroscopy technique. We found the energy gap at about 1.8 eV. The samples were grown by molecular beam epitaxy and the Al fraction was measured by reflection high energy electro-diffraction technique.
Publisher: Amsterdam: Elsevier B.V
Language: English

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Optical absorption and band gap shift of n-doped AlxGa1−xAs alloys grown by MBE

Ferreira da Silva, A. ; Persson, C. ; Berggren, K.-F. ; Pepe, I. ; Santos Alves, A. ; de Oliveira, A.G.

Amsterdam: Elsevier B.V

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