Idioma:

Bipolar Integrated Circuits in 4H-SiC

Singh, S ; Cooper, J A

IEEE transactions on electron devices, 2011-04, Vol.58 (4), p.1084-1090 [Periódico revisado por pares]

New York, NY: IEEE

Texto completo disponível

Citações Citado por

Enviar para

Título:
Bipolar Integrated Circuits in 4H-SiC
Autor: Singh, S ; Cooper, J A
Assuntos: Applied sciences ; Bipolar transistors ; Design. Technologies. Operation analysis. Testing ; Devices ; Digital ; Electric potential ; Electronics ; Exact sciences and technology ; High-temperature integrated circuits (ICs) ; Integrated circuit modeling ; Integrated circuits ; Inverters ; Microelectronic fabrication (materials and surfaces technology) ; Noise ; Oxides ; Propagation delay ; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices ; SiC ICs ; Silicon carbide ; silicon carbide (SiC) ; smart power ; Stability ; Temperature measurement ; transistor-transistor logic (TTL) ; Transistors ; Voltage
É parte de: IEEE transactions on electron devices, 2011-04, Vol.58 (4), p.1084-1090
Notas: ObjectType-Article-2
SourceType-Scholarly Journals-1
ObjectType-Feature-1
content type line 23
Descrição: Due to its wide band gap, 4H-SiC is potentially capable of sustained operation at temperatures well above 600 °C, but current devices are limited to lower temperatures by the stability of the metallization and passivation layers. SiC bipolar transistors are capable of operation at temperatures above 300 °C, as they do not have an oxide layer under high electric field and hence do not suffer from oxide reliability issues. In this paper, we describe bipolar digital integrated circuits on semi-insulating 4H-SiC that operate over a wide range of supply voltage and temperature, demonstrating the potential of SiC for high-temperature small-scale integrated-circuit applications.
Editor: New York, NY: IEEE
Idioma: Inglês

Links

View record in Pascal Francis

Voltar para lista de resultados

Realização: Logos de Redes Sociais:

Bipolar Integrated Circuits in 4H-SiC

Singh, S ; Cooper, J A

New York, NY: IEEE

Buscando em bases de dados remotas. Favor aguardar.