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Nitrogen doped TiO2 films for hydrogen generation and optoelectronic applications

El-Rahman, A. M. Abd ; Rabia, Mohamed ; Mohamed, S. H.

Journal of materials science. Materials in electronics, 2023-05, Vol.34 (14), p.1149, Article 1149 [Periódico revisado por pares]

New York: Springer US

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Título:
Nitrogen doped TiO2 films for hydrogen generation and optoelectronic applications
Autor: El-Rahman, A. M. Abd ; Rabia, Mohamed ; Mohamed, S. H.
Assuntos: Anatase ; Characterization and Evaluation of Materials ; Chemistry and Materials Science ; Crystal structure ; Gas flow ; Grain size ; Hydrogen production ; Light irradiation ; Materials Science ; Nitrogen ; Optical and Electronic Materials ; Optoelectronics ; Photoelectric effect ; Photoelectric emission ; Refractivity ; Silicon substrates ; Thin films ; Titanium dioxide ; Water splitting
É parte de: Journal of materials science. Materials in electronics, 2023-05, Vol.34 (14), p.1149, Article 1149
Descrição: N:TiO 2 thin films were sputtered on glass, Si(100) and FTO substrates at various nitrogen to total reactive gas flow ratio (η). Tetragonal anatase phase were indexed for all prepared films. The incorporation of nitrogen into the TiO 2 film did not have significant influence on the crystal structure. Slight decrease in the peak intensities and grain sizes was observed with increasing nitrogen ratio. The reduction of the UV–Vis–NIR transmittance and the elevation of reflectance coincided with the nitrogen content. The optical band gap ( E g ) of the indirect transition was reduced from 3.35 to 3.04 eV with rising η from 0 to 0.95. Nitrogen incorporation also had a great effect on the refractive index ( n ) and extinction coefficient (k). The results of measuring the chopped and continuous photocurrent densities under light irradiation leaded to examine the photoelectrochemical process for sewage water splitting of N:TiO 2 films. The photocurrent density enhances with increasing nitrogen content up to η = 0.75, above which a decrease in photocurrent is observed.
Editor: New York: Springer US
Idioma: Inglês

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Nitrogen doped TiO2 films for hydrogen generation and optoelectronic applications

El-Rahman, A. M. Abd ; Rabia, Mohamed ; Mohamed, S. H.

New York: Springer US

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