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Neutron-Induced Radiation Effects in UMOS Transistor

Alberton, S G ; Bôas, A C V ; Medina, N H ; Guazzelli, M A ; Aguiar, V A P ; Added, N ; Federico, C A ; Gonçalez, O L ; Cavalcante, T C ; Pereira Junior, E C F ; Vaz, R G

Journal of physics. Conference series, 2022-09, Vol.2340 (1), p.12046 [Periódico revisado por pares]

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Título:
Neutron-Induced Radiation Effects in UMOS Transistor
Autor: Alberton, S G ; Bôas, A C V ; Medina, N H ; Guazzelli, M A ; Aguiar, V A P ; Added, N ; Federico, C A ; Gonçalez, O L ; Cavalcante, T C ; Pereira Junior, E C F ; Vaz, R G
Assuntos: Avionics ; Charge efficiency ; Electronic devices ; Energy measurement ; Energy spectra ; Estimates ; Fast neutrons ; Neutron beams ; Neutron irradiation ; Neutrons ; Nuclear fusion ; Nuclear reactions ; Physics ; Power semiconductor devices ; Radiation counters ; Radiation effects ; Silicon ; Single Event Effects ; Transistors
É parte de: Journal of physics. Conference series, 2022-09, Vol.2340 (1), p.12046
Descrição: Abstract Ground level electronics and avionics systems may suffer from radiation effects induced by neutrons. Neutrons can induce radiation effects in electronic devices via fusion-evaporation nuclear reactions, but few studies have been reported for technologies such as UMOSFET. In this work, estimates and experimental studies on neutron-induced radiation effects via nuclear reactions in a Si-based UMOSFET are presented. Methods for probability estimates of neutron-induced Single-Event Effects (SEEs) in Si-based power transistors and neutron beam energy measurement is presented. The energy spectrum of a UMOSFET subject to fast neutron irradiation was then compared to that of a high charge collection efficiency silicon particle detector.
Editor: Bristol: IOP Publishing
Idioma: Inglês

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