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III-V nanowires with quantum dots: MBE growth and properties

Reznik, R R ; Kotlyar, K P ; Gridchin, V O ; Ilkiv, I V ; Khrebtov, A I ; Samsonenko, Yu B ; Soshnikov, I P ; Kryzhanovskaya, N V ; Leandro, L ; Akopian, N ; Cirlin, G E

Journal of physics. Conference series, 2021-11, Vol.2015 (1), p.12124 [Periódico revisado por pares]

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III-V nanowires with quantum dots: MBE growth and properties
Autor: Reznik, R R ; Kotlyar, K P ; Gridchin, V O ; Ilkiv, I V ; Khrebtov, A I ; Samsonenko, Yu B ; Soshnikov, I P ; Kryzhanovskaya, N V ; Leandro, L ; Akopian, N ; Cirlin, G E
É parte de: Journal of physics. Conference series, 2021-11, Vol.2015 (1), p.12124
Descrição: Abstract We demonstrate growth of AlGaAs NWs with GaAs QDs and InP NWs with InAsP QDs on silicon substrates. Results of GaAs QDs optical properties study have shown that these objects are sources of single photons. In case of InP NWs with InAsP QDs, the results showed that ~ 100% of homogeneously oriented NWs were formed with good optical quality of this system on a Si(111). PL spectrum peak near 1.3 μm indicates that such system is promising for optoelectronic devices.
Editor: IOP Publishing
Idioma: Inglês

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