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Solution Chemistry, Substrate, and Processing Effects on Chemical Homogeneity in Lead Zirconate Titanate Thin Films

Ihlefeld, Jon F. ; Kotula, Paul G. ; Gauntt, Bryan D. ; Gough, Dara V. ; Brennecka, Geoff L. ; Lu, Ping ; Spoerke, Erik D. Alford, N. ; Alford, N.

Journal of the American Ceramic Society, 2015-07, Vol.98 (7), p.2028-2038 [Periódico revisado por pares]

Columbus: Blackwell Publishing Ltd

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  • Título:
    Solution Chemistry, Substrate, and Processing Effects on Chemical Homogeneity in Lead Zirconate Titanate Thin Films
  • Autor: Ihlefeld, Jon F. ; Kotula, Paul G. ; Gauntt, Bryan D. ; Gough, Dara V. ; Brennecka, Geoff L. ; Lu, Ping ; Spoerke, Erik D.
  • Alford, N. ; Alford, N.
  • Assuntos: Crystallization ; Heating ; Solution chemistry ; Spectrum analysis ; Temperature effects ; Thin films ; Titanium
  • É parte de: Journal of the American Ceramic Society, 2015-07, Vol.98 (7), p.2028-2038
  • Notas: National Institute of Nano Engineering
    Sandia National Laboratories
    istex:C3360EE96F083223C07FB5C674999C3E51706EBF
    ArticleID:JACE13576
    ark:/67375/WNG-RTT3L49K-C
    Fig. S1. Annular dark field STEM image of IMO-derived PZT deposited on Pt/ZnO/SiO2/Si substrates and pyrolyzed at 400°C. Arrows indicate grain boundaries that intersect the top and bottom interfaces of the PZT film. The top image is the raw image and the bottom image has had a levels and gamma correction applied to accentuate the perovskite grain boundaries in the PZT layer. Levels were adjusted from 0-256 to 20-212 and gamma was adjusted to 0.29. Fig. S2. Quantified composition maps of lead (top row), zirconium (middle row), and titanium (bottom row) ions in IMO-derived PZT films prepared on Pt/ZnO/SiO2/Si. Results are for crystallized films that were pyrolyzed at 300°C (left column), 350°C (middle column), and 400°C (right column). The color scale corresponds to the partial fractions of each respective cation. Quantitative values are only valid within the PZT layers. Fig. S3. Quantified composition maps of lead (top row), zirconium (middle row), and titanium (bottom row) ions in IMO-derived PZT films prepared on Pt/Ti/SiO2/Si. Results are for crystallized films that were pyrolyzed at 300°C (left column), 350°C (middle column), and 400°C (right column). The color scale on the right corresponds to the partial fractions of each respective cation. Quantitative values are only valid within the PZT layers. Fig. S4. Quantified composition maps of lead (top row), zirconium (middle row), and titanium (bottom row) ions in 2-MOE-derived PZT films prepared on Pt/ZnO/SiO2/Si. Results are for crystallized films that were pyrolyzed at 300°C (left column), 350°C (middle column), and 400°C (right column). The color scale on the right corresponds to the partial fractions of each respective cation. Quantitative values are only valid within the PZT layers. Fig. S5. Quantified composition maps of lead (top row), zirconium (middle row), and titanium (bottom row) ions in 2-MOE-derived PZT films prepared on Pt/Ti/SiO2/Si. Results are for crystallized films that were pyrolyzed at 300°C (left column), 350°C (middle column), and 400°C (right column). The color scale on the right corresponds to the partial fractions of each respective cation. Quantitative values are only valid within the PZT layers. Fig. S6. Quantitative compositional analysis of IMO-derived PZT films in the pyrolyzed, non-crystallized, state deposited on Pt/ZnO/SiO2/Si (top, a-c) and Pt/Ti/SiO2/Si (bottom, d-e) substrates for 300°C (a) 350°C (b, d) and 400°C (c, e) pyrolysis conditions. The 300°C pyrolyzed film on Pt/Ti did not survive sample preparation and is not shown here. Fig. S7. Quantified composition maps of lead (top row), zirconium (middle row), and titanium (bottom row) ions in IMO-derived PZT gels prepared on Pt/ZnO/SiO2/Si. Results are for gels pyrolyzed at 300°C (left column), 350°C (middle column), and 400°C (right column). The color scale on the right corresponds to the partial fractions of each respective cation. Quantitative values are only valid within the PZT layers. Fig. S8. Quantified composition maps of lead (top row), zirconium (middle row), and titanium (bottom row) ions in IMO-derived PZT gels prepared on Pt/Ti/SiO2/Si. Results are for gels pyrolyzed at 300°C (left column), 350°C (middle column), and 400°C (right column). The color scale on the right corresponds to the partial fractions of each respective cation. Quantitative values are only valid within the PZT layers. Fig. S9. Quantified composition maps of lead (top row), zirconium (middle row), and titanium (bottom row) ions in 2-MOE-derived PZT gels prepared on Pt/ZnO/SiO2/Si. Results are for gels pyrolyzed at 300°C (left column), 350°C (middle column), and 400°C (right column). The color scale on the right corresponds to the partial fractions of each respective cation. Quantitative values are only valid within the PZT layers. Fig. S10. Quantified composition maps of lead (top row), zirconium (middle row), and titanium (bottom row) ions in 2-MOE-derived PZT gels prepared on Pt/Ti/SiO2/Si. Results are for gels pyrolyzed at 300°C (left column), 350°C (middle column), and 400°C (right column). The color scale on the right corresponds to the partial fractions of each respective cation. Quantitative values are only valid within the PZT layers. Fig. S11. Quantified composition maps of lead (top row), zirconium (middle row), and titanium (bottom row) ions in IMO-derived PZT films prepared on Pt/ZnO/SiO2/Si processed within a rapid thermal annealer. Results are for crystallized films that were fired to 700°C with ramp rates of 15°C/s (left column), 50°C/s (middle column), and 100°C/s (right column). The color scale on the right corresponds to the partial fractions of each respective cation. Quantitative values are only valid within the PZT layers. The rough interface between ZnO and SiO2 is indicative of ZnSi2O4 formation. Fig. S12. Quantified composition maps of lead (top row), zirconium (middle row), and titanium (bottom row) ions in 2-MOE-derived PZT films prepared on Pt/ZnO/SiO2/Si processed within a rapid thermal annealer. Results are for crystallized films that were fired to 700°C with ramp rates of 15°C/s (left column), 50°C/s (middle column), and 100°C/s (right column). The color scale on the right corresponds to the partial fractions of each respective cation. Quantitative values are only valid within the PZT layers. The rough interface between ZnO and SiO2 is indicative of ZnSi2O4 formation. Fig. S13. Annular dark field STEM image of 2-MOE-derived PZT deposited on Pt/ZnO/SiO2/Si and fired within a rapid thermal annealer to 700°C with a ramp rate of 50°C/s. The arrow indicates a thin surface pyrochlore layer on top of perovskite grains.
    USDOE
  • Descrição: The effects of chemistry, substrate, and processing conditions on through‐thickness cation distributions are explored in solution‐derived morphotropic composition lead zirconate titanate (PZT) films. Films prepared from chelate‐based and conventional sol–gel chemistries were spin cast onto Pt/ZnO/SiO2/Si and Pt/Ti/SiO2/Si substrates and pyrolyzed at 300°C, 350°C, and 400°C prior to crystallization at 700°C either in a preheated furnace or via rapid thermal processing. For films crystallized within a conventional furnace on Pt/ZnO/SiO2/Si substrates no chemical gradients were observed. All films prepared on Pt/Ti/SiO2/Si substrates had increased titanium concentrations near the PZT/Pt interfaces, and the source is shown to be titanium diffusing from the substrate metallization stack. The effect of heating method and rate was explored in films prepared on Pt/ZnO/SiO2/Si substrates with 15°C, 50°C, and 100°C/s heating rates within a rapid thermal annealer. Only one solution chemistry‐heating rate combination resulted in the formation of a chemical gradient: a conventional sol–gel chemistry and a 50°C/s heating rate. Infrared spectroscopy of pyrolyzed gel films showed absorption spectra differences in the bonding structure between the two chemistries with the conventional sol–gel‐derived films exhibiting a signature more similar to that of a PbTiO3 gel, suggestive of a gel‐structure source of gradient formation during crystallization.
  • Editor: Columbus: Blackwell Publishing Ltd
  • Idioma: Inglês

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