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Low Dark-Current Germanium-on-Silicon Near-Infrared Detectors

Colace, L. ; Ferrara, P. ; Assanto, G. ; Fulgoni, D. ; Nash, L.

IEEE photonics technology letters, 2007-11, Vol.19 (22), p.1813-1815

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Título:
Low Dark-Current Germanium-on-Silicon Near-Infrared Detectors
Autor: Colace, L. ; Ferrara, P. ; Assanto, G. ; Fulgoni, D. ; Nash, L.
Assuntos: Chemical vapor deposition ; Dark current ; Density ; Detectors ; Doping ; Electric potential ; Germanium radiation detectors ; Hydrogen ; infrared detectors ; Operational amplifiers ; Optical amplifiers ; Optical device fabrication ; Optical receivers ; optoelectronic devices ; Photodiodes ; Photonics ; PIN photodiodes ; Voltage
É parte de: IEEE photonics technology letters, 2007-11, Vol.19 (22), p.1813-1815
Notas: ObjectType-Article-2
SourceType-Scholarly Journals-1
ObjectType-Feature-1
content type line 23
Descrição: We demonstrate near-infrared Ge-on-Si photodiodes designed to minimize the dark current density and fabricated by chemical vapor deposition. The p-i-n detectors exhibit record low dark currents of 7 nA at 1-V reverse bias with responsivities close to the theoretical maximum. An excellent performance is ascertained even for very low reverse voltages.
Editor: New York: IEEE
Idioma: Inglês

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