GeSn-based p-i-n photodiodes with strained active layer on a Si wafer
Tseng, H. H. ; Li, H. ; Mashanov, V. ; Yang, Y. J. ; Cheng, H. H. ; Chang, G. E. ; Soref, R. A. ; Sun, G.
Applied physics letters, 2013-12, Vol.103 (23) [Revista revisada por pares]Melville: American Institute of Physics
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