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Electrochemical Formation of Close-Packed Phenyl Layers on Si(111)

de Villeneuve, C. Henry ; Pinson, J ; Bernard, M. C ; Allongue, P

The journal of physical chemistry. B, 1997-04, Vol.101 (14), p.2415-2420 [Periódico revisado por pares]

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Título:
Electrochemical Formation of Close-Packed Phenyl Layers on Si(111)
Autor: de Villeneuve, C. Henry ; Pinson, J ; Bernard, M. C ; Allongue, P
Assuntos: Chemical Sciences ; Material chemistry
É parte de: The journal of physical chemistry. B, 1997-04, Vol.101 (14), p.2415-2420
Notas: ark:/67375/TPS-J1K7CT0M-R
Abstract published in Advance ACS Abstracts, March 15, 1997.
istex:DDF980292B76F1DFF4258950CAF70B0F6B418ACC
Descrição: 4-NO2 and 4-Br benzenediazonium salts have been electrochemically reduced on H-terminated Si(111) electrodes. Electrochemical measurements evidence that the reaction results in a robust modification of Si(111) surfaces. XPS shows that organic films are monolayer thick and that covalent ≡SiAr bonding occurs, with no oxide at the interface. In the case of the Br salt, quantitative RBS measurements suggest that layers are (2×1) close-packed and assess their stability against several rinsing procedures including exposure to 40% HF. A mechanism of grafting is discussed.
Editor: American Chemical Society
Idioma: Inglês

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