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Resistive switching memories based on metal oxides: mechanisms, reliability and scaling

Ielmini, Daniele

Semiconductor science and technology, 2016-05, Vol.31 (6), p.63002 [Periódico revisado por pares]

IOP Publishing

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  • Título:
    Resistive switching memories based on metal oxides: mechanisms, reliability and scaling
  • Autor: Ielmini, Daniele
  • Assuntos: conductive bridge memory (CBRAM) ; crossbar array ; emerging memory ; memory scaling ; memristor ; metal-insulator transition ; resistance switching memory (RRAM)
  • É parte de: Semiconductor science and technology, 2016-05, Vol.31 (6), p.63002
  • Notas: SST-102385.R1
  • Descrição: With the explosive growth of digital data in the era of the Internet of Things (IoT), fast and scalable memory technologies are being researched for data storage and data-driven computation. Among the emerging memories, resistive switching memory (RRAM) raises strong interest due to its high speed, high density as a result of its simple two-terminal structure, and low cost of fabrication. The scaling projection of RRAM, however, requires a detailed understanding of switching mechanisms and there are potential reliability concerns regarding small device sizes. This work provides an overview of the current understanding of bipolar-switching RRAM operation, reliability and scaling. After reviewing the phenomenological and microscopic descriptions of the switching processes, the stability of the low- and high-resistance states will be discussed in terms of conductance fluctuations and evolution in 1D filaments containing only a few atoms. The scaling potential of RRAM will finally be addressed by reviewing the recent breakthroughs in multilevel operation and 3D architecture, making RRAM a strong competitor among future high-density memory solutions.
  • Editor: IOP Publishing
  • Idioma: Inglês
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  • Realização: ABCD-USP USP   Logos de Redes Sociais: Freepik

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