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0.2-μm gate-length InGaP-InGaAs DCFETs for c-band MMIC amplifier applications

Chiu, Hsien-Chin ; Yang, Shih-Cheng ; Lin, Cheng-Kuo ; Hwu, Ming-Jyh ; Chan, Yi-Jen

IEEE transactions on electron devices, 2003-07, Vol.50 (7), p.1599-1603 [Periódico revisado por pares]

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Título:
0.2-μm gate-length InGaP-InGaAs DCFETs for c-band MMIC amplifier applications
Autor: Chiu, Hsien-Chin ; Yang, Shih-Cheng ; Lin, Cheng-Kuo ; Hwu, Ming-Jyh ; Chan, Yi-Jen
Assuntos: Amplifiers ; Circuits ; Density ; Devices ; Interlayers ; Linearity ; Lithography ; Power amplifiers
É parte de: IEEE transactions on electron devices, 2003-07, Vol.50 (7), p.1599-1603
Notas: ObjectType-Article-2
SourceType-Scholarly Journals-1
ObjectType-Feature-1
content type line 23
Descrição: A C-band In sub(0.49)Ga sub(0.51)P-In sub(0.15)Ga sub(0.85)As doped-channel FET (DCFET) monolithic power amplifier was designed and fabricated using low-k benzocyclobutene (BCB) interlayer technology. With a photosensitive low-k BCB interlayer ( member of =2.7), not only can the circuit's passivation layer, but also the capacitor insulator, via holes, and bridge process be realized simultaneously, where the process complexity and cost can be reduced. In addition, a 0.2- mu m T-shaped gate InGaP-InGaAs doped-channel FET with a high current density and a high linearity is introduced to the amplifier using the e-beam lithography. This C-band power amplifier can achieve a linear power gain of 9.3 dB and an output power of 15.3 dBm, which proves that this novel MMIC process using low-k BCB interlayer technology is attractive for microwave and millimeter wave circuit applications.
Idioma: Inglês

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