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Acceptor Densities and Acceptor Levels in Undoped GaSb Determined by Free Carrier Concentration Spectroscopy

Matsuura, Hideharu ; Morita, Kouhei ; Nishikawa, Kazuhiro ; Mizukoshi, Takeo ; Segawa, Masaharu ; Susaki, Wataru

Japanese Journal of Applied Physics, 2002, Vol.41 (Part 1, No. 2A), p.496-500 [Periódico revisado por pares]

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  • Título:
    Acceptor Densities and Acceptor Levels in Undoped GaSb Determined by Free Carrier Concentration Spectroscopy
  • Autor: Matsuura, Hideharu ; Morita, Kouhei ; Nishikawa, Kazuhiro ; Mizukoshi, Takeo ; Segawa, Masaharu ; Susaki, Wataru
  • É parte de: Japanese Journal of Applied Physics, 2002, Vol.41 (Part 1, No. 2A), p.496-500
  • Notas: ObjectType-Article-2
    SourceType-Scholarly Journals-1
    ObjectType-Feature-1
    content type line 23
  • Descrição: It is experimentally demonstrated that the densities and energy levels of impurities can be precisely determined by the graphical peak analysis method based on Hall-effect measurements, referred to as free carrier concentration spectroscopy. Using p-type undoped GaSb epilayers grown by MBE, the densities and energy levels of several acceptor species are accurately determined. Five acceptor species are detected in the undoped GaSb epilayers grown by MBE, while two are also found in p-type undoped GaSb wafers. A 21-41 meV acceptor and a 75-99 meV acceptor exist both in the epilayers and in the wafer. On the other hand, a 164-181 meV acceptor is detected in epilayers grown at an Sb4/Ga flux beam equivalent pressure ratio of 8 or 10, while a 259 meV acceptor is found in the epilayer grown at Sb4/Ga = 6. In addition, a shallow acceptor, which is completely ionized at 80 K, is found in the epilayers. The densities of the shallow acceptor and the 21-41 meV acceptor are minimum at Sb4/Ga = 8, which makes the hole concentration lowest in the temperature range of the measurement. 21 refs.
  • Idioma: Inglês
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  • Realização: ABCD-USP USP   Logos de Redes Sociais: Freepik

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