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10 kV Silicon Carbide PiN Diodes—From Design to Packaged Component Characterization

Asllani, Besar ; Morel, Hervé ; Phung, Luong Viêt ; Planson, Dominique

Energies (Basel), 2019-11, Vol.12 (23), p.4566 [Periódico revisado por pares]

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Título:
10 kV Silicon Carbide PiN Diodes—From Design to Packaged Component Characterization
Autor: Asllani, Besar ; Morel, Hervé ; Phung, Luong Viêt ; Planson, Dominique
Assuntos: Capacitance ; Component reliability ; Conduction ; Design ; Diodes ; Efficiency ; Electric power ; Engineering Sciences ; Mathematical models ; Mountains ; PIN diodes ; Reliability analysis ; Silicon carbide ; Temperature ; Transistors ; Voltage
É parte de: Energies (Basel), 2019-11, Vol.12 (23), p.4566
Descrição: This paper presents the design, fabrication and characterization results obtained on the last generation (third run) of SiC 10 kV PiN diodes from SuperGrid Institute. In forward bias, the 59 mm2 diodes were tested up to 100 A. These devices withstand voltages up to 12 kV on wafer (before dicing, packaging) and show a low forward voltage drop at 80 A. The influence of the temperature from 25 °C to 125 °C has been assessed and shows that resistivity modulation occurs in the whole temperature range. Leakage current at 3 kV increases with temperature, while being three orders of magnitude lower than those of equivalent Si diodes. Double-pulse switching tests reveal the 10 kV SiC PiN diode’s outstanding performance. Turn-on dV/dt and di/dt are −32 V/ns and 311 A/µs, respectively, whereas turn-off dV/dt and di/dt are 474 V/ns and −4.2 A/ns.
Editor: Basel: MDPI AG
Idioma: Inglês

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