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Transient photocurrent in α-As2Se3 thin films with optical bias

Iovu, M. A ; Harea, D. V ; Vasiliev, I. A ; Colomeico, E. P ; Iovu, M. S

SPIE proceedings series, 2005, Vol.5972, p.59720A-59720A-7

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Título:
Transient photocurrent in α-As2Se3 thin films with optical bias
Autor: Iovu, M. A ; Harea, D. V ; Vasiliev, I. A ; Colomeico, E. P ; Iovu, M. S
Assuntos: Exact sciences and technology ; Fundamental areas of phenomenology (including applications) ; Glasses, quartz ; Optical materials ; Optics ; Physics
É parte de: SPIE proceedings series, 2005, Vol.5972, p.59720A-59720A-7
Notas: Conference Location: Bucharest, Romania
Conference Date: 2004-11-24|2004-11-26
Descrição: Relaxation of pulsed photocurrents under optical bias is studied in amorphous films of glassy alloys As2Se3:Snx (x=0 to 3.5 at. %) by the time-of-flight technique and steepness band-to-band light illumination. In frame of multiple-trapping model it is shown that by adding tin to the glass former As2Se3, the hole drift mobility is strongly increased and hamper the recombination. The kinetics of the long-term photocurrent decay can be described by stretched exponential hction. The dispersion parameter a, which can be deduced from the time dependence of the photocurrent Iph(t) -infinity- exp[-(τ/τ)α] and, is about 0.47 for undoped samples, and 0.35 for tin-containing samples. The obtained results indicate the variation in occupation of deep localized centers. For the investigated samples, the width of distribution of the deep traps is approximately kT/α~50-70 meV.
Editor: Bellingham, Wash: SPIE
Idioma: Inglês

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