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Atypical phase-change alloy Ga2Te3: atomic structure, incipient nanotectonic nuclei, and multilevel writing

Tverjanovich, Andrey ; Khomenko, Maxim ; Benmore, Chris J ; Bereznev, Sergei ; Sokolov, Anton ; Fontanari, Daniele ; Kiselev, Aleksei ; Lotin, Andrey ; Bychkov, Eugene

Journal of materials chemistry. C, Materials for optical and electronic devices, 2021-01, Vol.9 (47), p.17019-17032 [Periódico revisado por pares]

Cambridge: Royal Society of Chemistry

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  • Título:
    Atypical phase-change alloy Ga2Te3: atomic structure, incipient nanotectonic nuclei, and multilevel writing
  • Autor: Tverjanovich, Andrey ; Khomenko, Maxim ; Benmore, Chris J ; Bereznev, Sergei ; Sokolov, Anton ; Fontanari, Daniele ; Kiselev, Aleksei ; Lotin, Andrey ; Bychkov, Eugene
  • Assuntos: Atomic structure ; Crystallization ; Energy consumption ; First principles ; Gallium compounds ; INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CHEMISTRY ; Intermetallic compounds ; Nuclei ; Phase change materials ; Raman spectroscopy ; Synapses ; Tellurides ; Tensors
  • É parte de: Journal of materials chemistry. C, Materials for optical and electronic devices, 2021-01, Vol.9 (47), p.17019-17032
  • Notas: European Union (EU)
    Russian Academy of Sciences
    USDOE Office of Science (SC), Basic Energy Sciences (BES)
    AC02-06CH11357; 075-15-2019-1950; 075-15-2021-917; Contract no. DE-AC02-06CH1135
  • Descrição: Emerging brain-inspired computing, including artificial optical synapses, photonic tensor cores, neuromorphic networks, etc., needs phase-change materials (PCMs) of the next generation with lower energy consumption and a wider temperature range for reliable long-term operation. Gallium tellurides with higher melting and crystallization temperatures appear to be promising candidates and enable achieving the necessary requirements. Using high energy X-ray diffraction and Raman spectroscopy supported by first-principles simulations, we show that vitreous g-Ga2Te3 films essentially have a tetrahedral local structure and sp3 hybridization, similar to those in the stable fcc Ga2Te3 polymorph and in contrast to a vast majority of typical PCMs. Nevertheless, optical pump–probe laser experiments revealed high-contrast, fast and reversible multilevel SET-RESET transitions raising a question related to the phase change mechanism. A recently observed nanotectonic compression in bulk glassy Ga–Te alloys seems to be responsible for the PCM performance. Incipient nanotectonic nuclei, reminiscent of monoclinic high-pressure HP-Te II and rhombohedral HP-Ga2Te3, are present as minorities (2–4%) in g-Ga2Te3 but are suggested to grow dramatically with increasing temperature while interacting with appropriate laser pulses. This leads to co-crystallization of HP-polymorphs amplified by a high internal local pressure reaching 4–8 GPa. The metallic HP-forms provide an increasing optical and electrical contrast, favorable for reliable PCM operations, and higher energy efficiency.
  • Editor: Cambridge: Royal Society of Chemistry
  • Idioma: Inglês
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