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Doping graphene with boron: a review of synthesis methods, physicochemical characterization, and emerging applications

Agnoli, Stefano ; Favaro, Marco

Journal of materials chemistry. A, Materials for energy and sustainability, 2016-01, Vol.4 (14), p.52-525 [Periódico revisado por pares]

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  • Título:
    Doping graphene with boron: a review of synthesis methods, physicochemical characterization, and emerging applications
  • Autor: Agnoli, Stefano ; Favaro, Marco
  • Assuntos: Boron ; Dealing ; Devices ; Doping ; Electronics ; Graphene ; Nanostructure ; Three dimensional
  • É parte de: Journal of materials chemistry. A, Materials for energy and sustainability, 2016-01, Vol.4 (14), p.52-525
  • Notas: ambient pressure X ray absorption and photoelectron spectroscopy.
    Stefano Agnoli studied Materials Science at the University of Padua, obtaining his PhD degree in 2006. He then worked as a postdoctoral researcher at the same institution in the surface science group of Prof. G. Granozzi, focusing on the investigation of ultrathin oxide films using electron spectroscopies and local probes. From 2009 to 2010, he was associated with the group directed by Dr J. A. Rodriguez at the Brookhaven National Laboratory in New York, where he studied the catalytic properties of ceria-based materials. In 2015, Stefano was awarded the Raffaello Nasini Medal by the Inorganic Division of Italia Chemical Society, a national award recognising the most meritorious young Italian scientist in the field of Inorganic Chemistry. He is currently an associate professor at the University of Padua, and his present research activity is focused on the study of structural and chemical properties of graphene and other two dimensional materials.
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    Marco Favaro received his BS in 2009 and completed his MS degree in 2011 in Materials Science at the University of Padua under the supervision of Prof. Gaetano Granozzi. From 2011 to 2015, he worked at the same institution pursuing a PhD degree in Materials Science and Engineering under the supervision of Prof. Stefano Agnoli. After completing his PhD degree in 2015, he moved to the Lawrence Berkeley National Laboratory (USA), where he currently holds a joint post-doctoral fellowship at the Advanced Light Source and the Joint Center for Artificial Photosynthesis. His current research interest focuses on the investigation of the processes occurring at the solid/liquid interfaces by means of
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  • Descrição: Graphene based materials can be effectively modified by doping in order to specifically tailor their properties toward specific applications. So far the most used and widely investigated dopant heteroatom is probably nitrogen. However, boron is also an equally important element that can induce novel and complementary properties leading to specific implementation in alternative devices and technologies. In this paper, we survey the most recent preparation methods of boron doped graphene, including materials with specific morphology such as nanoribbons, quantum dots and 3D interconnected systems. We illustrate the results of theoretical and experimental studies dealing with the description and understanding of the main structural, electronic and chemical properties of this material. The emerging applications of boron doped graphene in several technological fields such as electrochemistry, sensors, photovoltaics, catalysis and biology are extensively reviewed. Graphene based materials can be effectively modified by doping in order to specifically tailor their properties toward specific applications.
  • Idioma: Inglês
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  • Realização: ABCD-USP USP   Logos de Redes Sociais: Freepik

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