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Growth of GaN based structures on Si(1 1 0) by molecular beam epitaxy

Cordier, Y. ; Moreno, J.-C. ; Baron, N. ; Frayssinet, E. ; Chauveau, J.-M. ; Nemoz, M. ; Chenot, S. ; Damilano, B. ; Semond, F.

Journal of crystal growth, 2010-09, Vol.312 (19), p.2683-2688 [Periódico revisado por pares]

Amsterdam: Elsevier B.V

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Título:
Growth of GaN based structures on Si(1 1 0) by molecular beam epitaxy
Autor: Cordier, Y. ; Moreno, J.-C. ; Baron, N. ; Frayssinet, E. ; Chauveau, J.-M. ; Nemoz, M. ; Chenot, S. ; Damilano, B. ; Semond, F.
Assuntos: A1. Molecular beam epitaxy ; Aluminum gallium nitrides ; B1. GaN on silicon ; B1. Nitrides ; B3. High electron mobility transistor ; B3. Light emitting diode ; Condensed matter: electronic structure, electrical, magnetic, and optical properties ; Condensed matter: structure, mechanical and thermal properties ; Cross-disciplinary physics: materials science; rheology ; Crystalline state (including molecular motions in solids) ; Density ; Devices ; Exact sciences and technology ; Gallium nitrides ; High electron mobility transistors ; Indium gallium nitrides ; Materials science ; Methods of crystal growth; physics of crystal growth ; Methods of deposition of films and coatings; film growth and epitaxy ; Molecular beam epitaxy ; Molecular structure ; Molecular, atomic, ion, and chemical beam epitaxy ; Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation ; Optical properties of bulk materials and thin films ; Physics ; Silicon substrates ; Structure of solids and liquids; crystallography ; Theory and models of crystal growth; physics of crystal growth, crystal morphology and orientation ; Theory of crystal structure, crystal symmetry; calculations and modeling
É parte de: Journal of crystal growth, 2010-09, Vol.312 (19), p.2683-2688
Notas: ObjectType-Article-2
SourceType-Scholarly Journals-1
ObjectType-Feature-1
content type line 23
Descrição: The growth of GaN based structures on Si(1 1 0) substrates by molecular beam epitaxy using ammonia as the nitrogen precursor is reported. The structural, optical and electrical properties of such structures are assessed and are quite similar to the ones obtained on Si(1 1 1) in-spite of the very different substrate surface symmetry. A threading dislocation density of 3.7×10 9 cm −2 is evaluated by transmission electron microscopy, which is in the low range of typical densities obtained on up to 2 μm thick GaN structures grown on Si(1 1 1). To assess the potential of such structure for device realization, AlGaN/GaN high electron mobility transistor and InGaN/GaN light emitting diode heterostructures were grown and their properties are compared with the ones obtained on Si(1 1 1).
Editor: Amsterdam: Elsevier B.V
Idioma: Inglês

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Growth of GaN based structures on Si(1 1 0) by molecular beam epitaxy

Cordier, Y. ; Moreno, J.-C. ; Baron, N. ; Frayssinet, E. ; Chauveau, J.-M. ; Nemoz, M. ; Chenot, S. ; Damilano, B. ; Semond, F.

Amsterdam: Elsevier B.V

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