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Chemical Vapor Deposition of β-LiGaO 2 Films on Si(100) Using a Novel Single Precursor

Sung, Myung M ; Kim, Chang G ; Kim, Yun-Soo

Bulletin of the Korean Chemical Society, 2004, Vol.25 (4), p.480-484 [Periódico revisado por pares]

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Título:
Chemical Vapor Deposition of β-LiGaO 2 Films on Si(100) Using a Novel Single Precursor
Autor: Sung, Myung M ; Kim, Chang G ; Kim, Yun-Soo
É parte de: Bulletin of the Korean Chemical Society, 2004, Vol.25 (4), p.480-484
Notas: KISTI1.1003/JNL.JAKO200402727092501
Descrição: $LiGaO_2$ films have been grown on Si (100) substrates using a new single precursor $[Li(OCH_2CH_2OCH_3)_2-Ga(CH_3)_2]_2$ under high vacuum conditions $(5{\times}10^{-6}Torr)$. The $[Li(OCH_2CH_2OCH_3)_2Ga(CH_3)_2]_2$ was synthe-sized and characterized by using spectroscopic methods and single-crystal X-ray diffraction analysis. The chemical composition, crystalline structure, and morphology of the deposited films were investigated by X-ray photoelectron spectroscopy, X-ray diffraction, and scanning electron microscopy. The results show that polycrystalline $LiGaO_2$ films preferentially oriented in the [010] direction can be deposited on Si (100) at 500-550$^{\circ}C$ by metal organic chemical vapor deposition (MOCVD). The single precursor $[LiOCH_2CH_2OCH_3)_2-Ga(CH_3)_2]_2$ has been found suitable for chemical vapor deposition of $LiGaO_2$ thin films on Si substrates.
Idioma: Coreano

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