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Optical Characterization of Gallium Oxide α and β Polymorph Thin-Films Grown on c-Plane Sapphire

Ghadbeigi, Leila ; Cooke, Jacqueline ; Dang, Giang T. ; Kawaharamura, Toshiyuki ; Yasuoka, Tatsuya ; Sun, Rujun ; Ranga, Praneeth ; Krishnamoorthy, Sriram ; Scarpulla, Michael A. ; Sensale-Rodriguez, Berardi

Journal of electronic materials, 2021-06, Vol.50 (6), p.2990-2998 [Periódico revisado por pares]

New York: Springer US

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Título:
Optical Characterization of Gallium Oxide α and β Polymorph Thin-Films Grown on c-Plane Sapphire
Autor: Ghadbeigi, Leila ; Cooke, Jacqueline ; Dang, Giang T. ; Kawaharamura, Toshiyuki ; Yasuoka, Tatsuya ; Sun, Rujun ; Ranga, Praneeth ; Krishnamoorthy, Sriram ; Scarpulla, Michael A. ; Sensale-Rodriguez, Berardi
Assuntos: 62nd Electronic Materials Conference 2020 ; Absorbance ; Characterization and Evaluation of Materials ; Chemical synthesis ; Chemical vapor deposition ; Chemistry and Materials Science ; Electronics and Microelectronics ; Excitation ; Gallium oxides ; Instrumentation ; Materials Science ; Metalorganic chemical vapor deposition ; Optical and Electronic Materials ; Optical properties ; Organic chemicals ; Organic chemistry ; Photoluminescence ; Sapphire ; Solid State Physics ; Spectra ; Substrates ; Thin films ; Topical Collection: 62nd Electronic Materials Conference 2020
É parte de: Journal of electronic materials, 2021-06, Vol.50 (6), p.2990-2998
Descrição: In this work, the optical properties of thin-film α -Ga 2 O 3 are examined and contrasted with those of β -Ga 2 O 3 thin films grown on similar substrates. Thin films of α -Ga 2 O 3 were synthesized employing mist chemical vapor deposition (mist CVD) on double-side polished c -plane sapphire. Optical properties were studied through absorbance, photoluminescence (PL), and photoluminescence excitation (PLE). Absorbance measurements showed spectra consistent with that previously reported in the literature, with E g ~ 5.19 eV for α- Ga 2 O 3 . Despite an absorption edge laying at higher energies, the PL spectra in α- Ga 2 O 3 films yield similar features to those of metal-organic chemical vapor deposition (MOCVD) grown β -Ga 2 O 3 thin-films. In both cases, when excited above the band gap, the PL spectra consist of UV, UV′, blue and green broad bands. As the excitation photon energy was varied, the relative intensity of these PL bands changed. This is attributed to a non-uniform defect concentration distribution across the sample depth. With smaller concentration of defects associated with blue and green emission in the bulk compared to the surface in the α -phase films.
Editor: New York: Springer US
Idioma: Inglês

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Optical Characterization of Gallium Oxide α and β Polymorph Thin-Films Grown on c-Plane Sapphire

Ghadbeigi, Leila ; Cooke, Jacqueline ; Dang, Giang T. ; Kawaharamura, Toshiyuki ; Yasuoka, Tatsuya ; Sun, Rujun ; Ranga, Praneeth ; Krishnamoorthy, Sriram ; Scarpulla, Michael A. ; Sensale-Rodriguez, Berardi

New York: Springer US

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