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Temperature dependence of the band gap of perovskite semiconductor compound CsSnI3

Yu, Chonglong ; Chen, Zhuo ; J. Wang, Jian ; Pfenninger, William ; Vockic, Nemanja ; Kenney, John T. ; Shum, Kai

Journal of applied physics, 2011-09, Vol.110 (6) [Periódico revisado por pares]

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Título:
Temperature dependence of the band gap of perovskite semiconductor compound CsSnI3
Autor: Yu, Chonglong ; Chen, Zhuo ; J. Wang, Jian ; Pfenninger, William ; Vockic, Nemanja ; Kenney, John T. ; Shum, Kai
É parte de: Journal of applied physics, 2011-09, Vol.110 (6)
Descrição: The temperature dependence of the bandgap of perovskite semiconductor compound CsSnI3 is determined by measuring excitonic emission at low photoexcitation in a temperature range from 9 to 300 K. The bandgap increases linearly as the lattice temperature increases with a linear coefficient of 0.35 meV K−1. This behavior is distinctly different than that in most of tetrahedral semiconductors. First-principles simulation is employed to predict the bandgap change with the rigid change of lattice parameters under a quasi-harmonic approximation. It is justified that the thermal contribution dominates to the bandgap variation with temperature, while the direct contribution of electron-phonon interaction is conjectured to be negligible likely due to the unusual large electron effective mass for this material.
Idioma: Inglês

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