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Transport in novel gated quantum wires : the impact of wire length

EUGSTER, C. C ; DEL ALAMO, J. A ; ROOKS, M. J

Japanese Journal of Applied Physics, 1990-12, Vol.29 (12), p.L2257-L2260 [Periódico revisado por pares]

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Título:
Transport in novel gated quantum wires : the impact of wire length
Autor: EUGSTER, C. C ; DEL ALAMO, J. A ; ROOKS, M. J
Assuntos: Condensed matter: electronic structure, electrical, magnetic, and optical properties ; Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures ; Electronic transport in interface structures ; Exact sciences and technology ; Physics
É parte de: Japanese Journal of Applied Physics, 1990-12, Vol.29 (12), p.L2257-L2260
Descrição: Split-gate quantum wires of various lengths including 0.0 µm (constrictions), 0.5 µm, and 1.0 µm have been fabricated on an AlGaAs/GaAs modulation-doped heterostructure. Confinement is achieved using a split-gate formed by two 40 nm Au/Pd lines, resulting in small gate leakage and short electron-beam writing times. In a two-probe measurement, we have observed strong conductance steps at 4.2 K in 0.5 µm long split-gate quantum wires. These features, which are characteristic of near ballistic electron transport through the wire, are present at temperatures as high as 10 K. Transport through the 0.0 µm constrictions was dominated by tunneling and transport in the 1.0 µm long wires was of a diffusive nature.
Editor: Tokyo: Japanese journal of applied physics
Idioma: Inglês

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