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Fast and Broadband Photoresponse of Few-Layer Black Phosphorus Field-Effect Transistors

Buscema, Michele ; Groenendijk, Dirk J ; Blanter, Sofya I ; Steele, Gary A ; van der Zant, Herre S. J ; Castellanos-Gomez, Andres

Nano letters, 2014-06, Vol.14 (6), p.3347-3352 [Revista revisada por pares]

Washington, DC: American Chemical Society

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Fast and Broadband Photoresponse of Few-Layer Black Phosphorus Field-Effect Transistors
Autor: Buscema, Michele ; Groenendijk, Dirk J ; Blanter, Sofya I ; Steele, Gary A ; van der Zant, Herre S. J ; Castellanos-Gomez, Andres
Materias: Applied sciences ; Broadband ; Electronics ; Exact sciences and technology ; Excitation ; Field effect transistors ; General equipment and techniques ; Instruments, apparatus, components and techniques common to several branches of physics and astronomy ; Light ; Phosphorus ; Physics ; Semiconductor devices ; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices ; Semiconductors ; Sensors (chemical, optical, electrical, movement, gas, etc.); remote sensing ; Transistors ; Transistors, Electronic ; Two dimensional ; Wavelengths
Es parte de: Nano letters, 2014-06, Vol.14 (6), p.3347-3352
Notas: ObjectType-Article-1
SourceType-Scholarly Journals-1
ObjectType-Feature-2
content type line 23
Descripción: Few-layer black phosphorus, a new elemental two-dimensional (2D) material recently isolated by mechanical exfoliation, is a high-mobility layered semiconductor with a direct bandgap that is predicted to strongly depend on the number of layers, from 0.35 eV (bulk) to 2.0 eV (single layer). Therefore, black phosphorus is an appealing candidate for tunable photodetection from the visible to the infrared part of the spectrum. We study the photoresponse of field-effect transistors (FETs) made of few-layer black phosphorus (3–8 nm thick), as a function of excitation wavelength, power, and frequency. In the dark state, the black phosphorus FETs can be tuned both in hole and electron doping regimes allowing for ambipolar operation. We measure mobilities in the order of 100 cm2/V s and a current ON/OFF ratio larger than 103. Upon illumination, the black phosphorus transistors show a response to excitation wavelengths from the visible region up to 940 nm and a rise time of about 1 ms, demonstrating broadband and fast detection. The responsivity reaches 4.8 mA/W, and it could be drastically enhanced by engineering a detector based on a PN junction. The ambipolar behavior coupled to the fast and broadband photodetection make few-layer black phosphorus a promising 2D material for photodetection across the visible and near-infrared part of the electromagnetic spectrum.
Editor: Washington, DC: American Chemical Society
Idioma: Inglés

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Fast and Broadband Photoresponse of Few-Layer Black Phosphorus Field-Effect Transistors

Buscema, Michele ; Groenendijk, Dirk J ; Blanter, Sofya I ; Steele, Gary A ; van der Zant, Herre S. J ; Castellanos-Gomez, Andres

Washington, DC: American Chemical Society

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