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Enhancement in electro-optic performance of InAlGaAs/GaAs quantum dot lasers by ex situ thermal annealing

You, Weicheng ; Arefin, Riazul ; Uzgur, Fatih ; Lee, Seunghyun ; Addamane, Sadhvikas J ; Liang, Baolai ; Arafin, Shamsul

Optics letters, 2023-04, Vol.48 (7), p.1938 [Periódico revisado por pares]

United States: Optical Society of America

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Título:
Enhancement in electro-optic performance of InAlGaAs/GaAs quantum dot lasers by ex situ thermal annealing
Autor: You, Weicheng ; Arefin, Riazul ; Uzgur, Fatih ; Lee, Seunghyun ; Addamane, Sadhvikas J ; Liang, Baolai ; Arafin, Shamsul
Assuntos: Defect annealing ; ENGINEERING ; Epitaxial growth ; Gallium arsenide ; Leakage current ; Molecular beam epitaxy ; Optical properties ; PIN diodes ; Quantum dot lasers ; Quantum dots ; Radiative recombination ; Threshold currents
É parte de: Optics letters, 2023-04, Vol.48 (7), p.1938
Notas: USDOE Office of Science (SC), Basic Energy Sciences (BES). Scientific User Facilities (SUF)
SAND-2023-01656J
NA0003525
USDOE National Nuclear Security Administration (NNSA)
Descrição: This Letter reports the growth, fabrication, and characterization of molecular beam epitaxy (MBE)-grown quaternary InAlGaAs/GaAs quantum dot (QD) lasers emitting at sub-900 nm. The presence of Al in QD-based active regions acts as the origin of defects and non-radiative recombination centers. Applying optimized thermal annealing annihilates the defects in p-i-n diodes, thus lowering the reverse leakage current by six orders of magnitude compared to as-grown devices. A systematic improvement in the optical properties of the devices is also observed in the laser devices with increasing annealing time. At an annealing temperature of 700°C for 180 s, Fabry-Pérot lasers exhibit a lower pulsed threshold current density at infinite length of 570 A/cm .
Editor: United States: Optical Society of America
Idioma: Inglês

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Enhancement in electro-optic performance of InAlGaAs/GaAs quantum dot lasers by ex situ thermal annealing

You, Weicheng ; Arefin, Riazul ; Uzgur, Fatih ; Lee, Seunghyun ; Addamane, Sadhvikas J ; Liang, Baolai ; Arafin, Shamsul

United States: Optical Society of America

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