0.18 µm BCD technology platform with best-in-class 6 V to 70 V power MOSFETs

Chou, Hsueh-Liang ; Su, P. C. ; Ng, J. C. W. ; Wang, P. L. ; Lu, H. T. ; Lee, C. J. ; Syue, W. J. ; Yang, S. Y. ; Tseng, Y. C. ; Cheng, C. C. ; Yao, C. W. ; Liou, R. S. ; Jong, Y. C. ; Tsai, J. L. ; Cai, Jun ; Tuan, H. C. ; Huang, Chih-Fang ; Gong, Jeng

2012 24th International Symposium on Power Semiconductor Devices and ICs, 2012, p.401-404

IEEE

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