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Strategies to obtain pattern fidelity in nanowire growth from large-area surfaces patterned using nanoimprint lithography

Otnes, Gaute ; Heurlin, Magnus ; Graczyk, Mariusz ; Wallentin, Jesper ; Jacobsson, Daniel ; Berg, Alexander ; Maximov, Ivan ; Borgström, Magnus T.

Nano research, 2016-10, Vol.9 (10), p.2852-2861 [Periódico revisado por pares]

Beijing: Tsinghua University Press

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Título:
Strategies to obtain pattern fidelity in nanowire growth from large-area surfaces patterned using nanoimprint lithography
Autor: Otnes, Gaute ; Heurlin, Magnus ; Graczyk, Mariusz ; Wallentin, Jesper ; Jacobsson, Daniel ; Berg, Alexander ; Maximov, Ivan ; Borgström, Magnus T.
Assuntos: Annan fysik ; Annealing ; Arrays ; Atomic/Molecular Structure and Spectra ; Biomedicine ; Biotechnology ; Chemistry and Materials Science ; Coalescing ; Condensed Matter Physics ; Den kondenserade materiens fysik ; Electromagnetic absorption ; Energy harvesting ; Engineering and Technology ; Fidelity ; Fysik ; Gallium arsenide ; Heat treating ; Light emission ; Lithography ; Materials Science ; metal–organic vapor phase epitaxial (MOVPE) ; Nano Technology ; nanoimprint lithography ; Nanostructure ; Nanotechnology ; Nanoteknik ; nanowire ; Nanowires ; Natural Sciences ; Naturvetenskap ; Optoelectronics ; Other Physics Topics ; patterning ; Physical Sciences ; Preservation ; Research Article ; Seeds ; semiconductor ; Solar energy ; Strategy ; Substrates ; Teknik ; 催化剂颗粒 ; 图案化 ; 太阳能电池 ; 生长过程 ; 纳米压印光刻 ; 纳米线阵列 ; 表面 ; 面积
É parte de: Nano research, 2016-10, Vol.9 (10), p.2852-2861
Notas: Position controlled nanowire growth is important for nanowire-based optoelectronic components which rely on light emission or light absorption. For solar energy harvesting applications, dense arrays of nanowires are needed; however, a major obstacle to obtaining dense nanowire arrays is seed particle displacement and coalescing during the annealing stage prior to nanowire growth. Here, we explore three different strategies to improve pattern preservation of large-area catalyst particle arrays defined by nanoimprint lithography for nanowire growth. First, we see that heat treating the growth substrate prior to nanoimprint lithography improves pattern preservation. Second, we explore the possibility of improving pattern preservation by fixing the seed particles in place prior to annealing by modifying the growth procedure. And third, we show that a SiNx growth mask can fully prevent seed particle displacement. We show how these strategies allow us to greatly improve the pattern fidelity of grown InP nanowire arrays with dimensions suitable for solar cell applications, ultimately achieving 100% pattern preservation over the sampled area. The generic nature of these strategies is supported through the synthesis of GaAs and GaP nanowires.
11-5974/O4
semiconductor,nanowire,nanoimprint lithography,metal-organic vaporphase epitaxial （MOVPE）,patterning
ObjectType-Article-1
SourceType-Scholarly Journals-1
ObjectType-Feature-2
content type line 23
Descrição: Position controlled nanowire growth is important for nanowire-based optoelectronic components which rely on light emission or light absorption. For solar energy harvesting applications, dense arrays of nanowires are needed; however, a major obstacle to obtaining dense nanowire arrays is seed particle displacement and coalescing during the annealing stage prior to nanowire growth. Here, we explore three different strategies to improve pattern preservation of large-area catalyst particle arrays defined by nanoimprint lithography for nanowire growth. First, we see that heat treating the growth substrate prior to nanoimprint lithography improves pattern preservation. Second, we explore the possibility of improving pattern preservation by fixing the seed particles in place prior to annealing by modifying the growth procedure. And third, we show that a SiNx growth mask can fully prevent seed particle displacement. We show how these strategies allow us to greatly improve the pattern fidelity of grown InP nanowire arrays with dimensions suitable for solar cell applications, ultimately achieving 100% pattern preservation over the sampled area. The generic nature of these strategies is supported through the synthesis of GaAs and GaP nanowires.
Editor: Beijing: Tsinghua University Press
Idioma: Inglês

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Strategies to obtain pattern fidelity in nanowire growth from large-area surfaces patterned using nanoimprint lithography

Otnes, Gaute ; Heurlin, Magnus ; Graczyk, Mariusz ; Wallentin, Jesper ; Jacobsson, Daniel ; Berg, Alexander ; Maximov, Ivan ; Borgström, Magnus T.

Beijing: Tsinghua University Press

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