0.25 μm emitter InP/InAlGaAs/GaAsSb double heterojunction bipolar transistor with passivation ledge exhibiting a current gain of over 100

Kashio, N ; Kurishima, K ; Ida, M ; Matsuzaki, H

Electronics letters, 2014-10, Vol.50 (22), p.1631-1633 [Periódico revisado por pares]

The Institution of Engineering and Technology

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