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Quenching interface recombination in wide bandgap Cu(In,Ga)Se 2 by potassium treatment

Zahedi‐Azad, Setareh ; Scheer, Roland

Physica status solidi. C, 2017, Vol.14 (6) [Periódico revisado por pares]

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Título:
Quenching interface recombination in wide bandgap Cu(In,Ga)Se 2 by potassium treatment
Autor: Zahedi‐Azad, Setareh ; Scheer, Roland
É parte de: Physica status solidi. C, 2017, Vol.14 (6)
Descrição: In this contribution, we report on the increase of the output voltage for wide bandgap ( E g > 1.4 eV) Cu(In,Ga)Se 2 films by doping potassium via post‐deposition treatment of the grown absorber layer. Also the carrier collection is improved by Potassium fluoride treatment (KF). The difference between KF‐treated and untreated samples is investigated using J – V parameters, external quantum efficiency (EQE), and V OC (t) transients under red illumination. Statistics shows an increased activation energy of saturation current and a trend toward a positive d V OC /dt. Thus the increased V OC can be explained through partially quenched recombination at the interface of buffer/absorber layer.
Idioma: Inglês

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