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Two-step treatment to obtain single-terminated SrTiO3 substrate and the related difference in both LaAlO3 film growth and electronic property

Peng, J. J. ; Hao, C. S. ; Liu, H. Y. ; Yan, Y.

AIP advances, 2021-08, Vol.11 (8), p.085303-085303-7 [Periódico revisado por pares]

Melville: American Institute of Physics

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  • Título:
    Two-step treatment to obtain single-terminated SrTiO3 substrate and the related difference in both LaAlO3 film growth and electronic property
  • Autor: Peng, J. J. ; Hao, C. S. ; Liu, H. Y. ; Yan, Y.
  • Assuntos: Chemical etching ; Film growth ; Heat treatment ; Image reconstruction ; Interfaces ; Magnetic properties ; Magnetoresistance ; Magnetoresistivity ; Strontium titanates ; Substrates ; Thermal stability ; Titanium dioxide ; Transport properties
  • É parte de: AIP advances, 2021-08, Vol.11 (8), p.085303-085303-7
  • Descrição: A two-step treatment, first chemical etching then thermal treatment, is proposed to achieve an atomically flat and thermally stable TiO2-terminated SrTiO3 substrate. LaAlO3 films were then grown on those TiO2-terminated and as-received substrates. LaAlO3 films on the TiO2-terminated SrTiO3 substrate maintained the layer-by-layer growth mode with a sharp interface, while films on the as-received substrates easily underwent reconstruction adverse to the sharp interface. Both LaAlO3/SrTiO3 interfaces displayed metallic conductive behavior, while the difference in magnetotransport properties indicated the difference in origin for interface conductivity. Large positive magnetoresistance implied that the LaAlO3/as-received substrate interface was a 3D conductive interface dominated by oxygen vacancies. However, the annealed-LaAlO3/treated-substrate interface preserved intrinsic quasi-2D interface magnetism as evidenced by large negative magnetoresistance.
  • Editor: Melville: American Institute of Physics
  • Idioma: Inglês
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