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Highly stable amorphous In-Ga-Zn-O thin-film transistors produced by eliminating deep subgap defects

Nomura, Kenji ; Kamiya, Toshio ; Hosono, Hideo

Applied physics letters, 2011-08, Vol.99 (5), p.053505-053505-3 [Periódico revisado por pares]

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Título:
Highly stable amorphous In-Ga-Zn-O thin-film transistors produced by eliminating deep subgap defects
Autor: Nomura, Kenji ; Kamiya, Toshio ; Hosono, Hideo
É parte de: Applied physics letters, 2011-08, Vol.99 (5), p.053505-053505-3
Descrição: Highly stable amorphous-In-Ga-Zn-O (a-IGZO) thin film transistors (TFTs) against constant current stress and negative bias light illumination stress were realized by forming a Y 2 O 3 passivation layer. A recent photoemission study revealed that deep defects located above the valence band top are formed at a high density to a depth of ∼2 nm in the surface layer of the a-IGZO channel. Here, we present that these deep defects are responsible for the instability of a-IGZO TFTs, and the instability can be much improved by passivation with Y 2 O 3 , which effectively eliminates the deep subgap defects from the surface of a-IGZO.
Editor: American Institute of Physics
Idioma: Inglês

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