High photosensitivity few-layered MoSe2 back-gated field-effect phototransistors

Abderrahmane, A ; Ko, P J ; Thu, T V ; Ishizawa, S ; Takamura, T ; Sandhu, A

Nanotechnology, 2014-09, Vol.25 (36), p.365202-365202 [Periódico revisado por pares]

Bristol: IOP Publishing

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