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Reducing the stochasticity of crystal nucleation to enable subnanosecond memory writing

Rao, Feng ; Ding, Keyuan ; Zhou, Yuxing ; Zheng, Yonghui ; Xia, Mengjiao ; Lv, Shilong ; Song, Zhitang ; Feng, Songlin ; Ronneberger, Ider ; Mazzarello, Riccardo ; Zhang, Wei ; Ma, Evan

Science (American Association for the Advancement of Science), 2017-12, Vol.358 (6369), p.1423-1427 [Periódico revisado por pares]

United States: American Association for the Advancement of Science

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Título:
Reducing the stochasticity of crystal nucleation to enable subnanosecond memory writing
Autor: Rao, Feng ; Ding, Keyuan ; Zhou, Yuxing ; Zheng, Yonghui ; Xia, Mengjiao ; Lv, Shilong ; Song, Zhitang ; Feng, Songlin ; Ronneberger, Ider ; Mazzarello, Riccardo ; Zhang, Wei ; Ma, Evan
Assuntos: Antimony ; Antimony compounds ; Antimony telluride ; Chemical bonds ; Commercialization ; Computer memory ; Computing time ; Crystallization ; Crystals ; Data storage ; Dynamic random access memory ; Flash memory (computers) ; Germanium ; Intermetallic compounds ; Kinetics ; Memory ; Memory devices ; Nucleation ; Phase change materials ; Random access memory ; Scandium ; Selection Criteria ; Static random access memory ; Stochasticity ; Technology ; Writing
É parte de: Science (American Association for the Advancement of Science), 2017-12, Vol.358 (6369), p.1423-1427
Notas: ObjectType-Article-1
SourceType-Scholarly Journals-1
ObjectType-Feature-2
content type line 23
USDOE
FG02-13ER46056
Descrição: Operation speed is a key challenge in phase-change random-access memory (PCRAM) technology, especially for achieving subnanosecond high-speed cache memory. Commercialized PCRAM products are limited by the tens of nanoseconds writing speed, originating from the stochastic crystal nucleation during the crystallization of amorphous germanium antimony telluride (Ge₂Sb₂Te₅). Here, we demonstrate an alloying strategy to speed up the crystallization kinetics. The scandium antimony telluride (Sc0.2Sb₂Te₃) compound that we designed allows a writing speed of only 700 picoseconds without preprogramming in a large conventional PCRAM device. This ultrafast crystallization stems from the reduced stochasticity of nucleation through geometrically matched and robust scandium telluride (ScTe) chemical bonds that stabilize crystal precursors in the amorphous state. Controlling nucleation through alloy design paves the way for the development of cache-type PCRAM technology to boost the working efficiency of computing systems.
Editor: United States: American Association for the Advancement of Science
Idioma: Inglês

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Reducing the stochasticity of crystal nucleation to enable subnanosecond memory writing

Rao, Feng ; Ding, Keyuan ; Zhou, Yuxing ; Zheng, Yonghui ; Xia, Mengjiao ; Lv, Shilong ; Song, Zhitang ; Feng, Songlin ; Ronneberger, Ider ; Mazzarello, Riccardo ; Zhang, Wei ; Ma, Evan

United States: American Association for the Advancement of Science

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