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Exciton dynamics at a single dislocation in GaN probed by picosecond time-resolved cathodoluminescence

Liu, W. ; Carlin, J.-F. ; Grandjean, N. ; Deveaud, B. ; Jacopin, G.

Applied physics letters, 2016-07, Vol.109 (4) [Periódico revisado por pares]

Melville: American Institute of Physics

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Título:
Exciton dynamics at a single dislocation in GaN probed by picosecond time-resolved cathodoluminescence
Autor: Liu, W. ; Carlin, J.-F. ; Grandjean, N. ; Deveaud, B. ; Jacopin, G.
Assuntos: Applied physics ; CATHODOLUMINESCENCE ; CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS ; CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY ; DEFECTS ; DIFFUSION ; DIFFUSION LENGTH ; DIPOLES ; EDGE DISLOCATIONS ; EXCITONS ; GALLIUM NITRIDES ; MEV RANGE 01-10 ; PROBES ; RECOMBINATION ; Recording ; SPATIAL RESOLUTION ; STRAINS ; TIME RESOLUTION
É parte de: Applied physics letters, 2016-07, Vol.109 (4)
Descrição: We investigate the dynamics of donor bound excitons (D°XA) at T = 10 K around an isolated single edge dislocation in homoepitaxial GaN, using a picosecond time-resolved cathodoluminescence (TR-CL) setup with high temporal and spatial resolutions. An ∼ 1.3 meV dipole-like energy shift of D°XA is observed around the dislocation, induced by the local strain fields. By simultaneously recording the variations of both the exciton lifetime and the CL intensity across the dislocation, we directly assess the dynamics of excitons around the defect. Our observations are well reproduced by a diffusion model. It allows us to deduce an exciton diffusion length of ∼24 nm as well as an effective area of the dislocation with a radius of ∼95 nm, where the recombination can be regarded as entirely non-radiative.
Editor: Melville: American Institute of Physics
Idioma: Inglês

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Exciton dynamics at a single dislocation in GaN probed by picosecond time-resolved cathodoluminescence

Liu, W. ; Carlin, J.-F. ; Grandjean, N. ; Deveaud, B. ; Jacopin, G.

Melville: American Institute of Physics

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