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Laser Induced Forward Transfer for front contact improvement in silicon heterojunction solar cells

Colina, M. ; Morales-Vilches, A. ; Voz, C. ; Martín, I. ; Ortega, P. ; Orpella, A. ; López, G. ; Alcubilla, R.

Applied surface science, 2015-05, Vol.336, p.89-95 [Periódico revisado por pares]

Elsevier B.V

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Título:
Laser Induced Forward Transfer for front contact improvement in silicon heterojunction solar cells
Autor: Colina, M. ; Morales-Vilches, A. ; Voz, C. ; Martín, I. ; Ortega, P. ; Orpella, A. ; López, G. ; Alcubilla, R.
Assuntos: Aplicacions industrials ; Contact ; Cèl·lules solars ; Doping ; Electric properties ; Energia solar fotovoltaica ; Energies ; Enginyeria de la telecomunicació ; Enginyeria dels materials ; Heterojunctions ; Industrial applications ; Laser direct-write ; Lasers ; LIFT ; Làsers ; Materials ; Materials elèctrics i electrònics ; Materials funcionals ; Photovoltaic cells ; Processament del senyal ; Propietats elèctriques ; Silicon ; Silicon heterojunction ; Silicon heterojunction solar cell ; Solar cells ; solarcell ; Àrees temàtiques de la UPC
É parte de: Applied surface science, 2015-05, Vol.336, p.89-95
Notas: ObjectType-Article-1
SourceType-Scholarly Journals-1
ObjectType-Feature-2
Descrição: •LIFT technique is investigated to improve heterojunction HJ solar cells.•Doped silicon films are adequate precursors for LIFT application in HJ cells.•LIFT leads to a reduction of the series resistance of a-Si HJ diodes.•LIFT allows the improvement of the front contact resistance in a-Si HJ solar cells. In this work the Laser Induced Forward Transfer (LIFT) technique is investigated to create n-doped regions on p-type c-Si substrates. The precursor source of LIFT consisted in a phosphorous-doped hydrogenated amorphous silicon layer grown by Plasma Enhanced Chemical Vapor Deposition (PECVD) onto a transparent substrate. Transfer of the doping atoms occurs when a sequence of laser pulses impinging onto the doped layer propels the material toward the substrate. The laser irradiation not only transfers the doping material but also produces a local heating that promotes its diffusion into the substrate. The laser employed was a 1064nm, lamp-pumped system, working at pulse durations of 100 and 400ns. In order to obtain a good electrical performance a comprehensive optimization of the applied laser fluency and number of pulses was carried out. Subsequently, arrays of n+p local junctions were created by LIFT and the resulting J–V curves demonstrated the formation of good quality n+ regions. These structures were finally incorporated to enhance the front contact in conventional silicon heterojunction solar cells leading to an improvement of conversion efficiency.
Editor: Elsevier B.V
Idioma: Inglês

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Laser Induced Forward Transfer for front contact improvement in silicon heterojunction solar cells

Colina, M. ; Morales-Vilches, A. ; Voz, C. ; Martín, I. ; Ortega, P. ; Orpella, A. ; López, G. ; Alcubilla, R.

Elsevier B.V

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