Temperature and oxide thickness influence on the generation lifetime determination in partially depleted SOI nMOSFETs
ABCD PBi
Temperature and oxide thickness influence on the generation lifetime determination in partially depleted SOI nMOSFETs
Autor:
Milene Galeti
João Antonio Martino 1959-
;
Eddy Simoen
;
Cor Claeys
;
International Symposium on Microelectronics Technology and Devices SBMICRO (20. 2005 Florianópolis)
Assuntos:
MICROELETRÔNICA
É parte de:
Claeys, C.; Swart, J. W.; Morimoto, N. I.; Verdonck, P., eds. Microelectronics Technology and Devices SBMICRO 2005 Pennington: The Electrochemical Society, 2005. Proceedings
v
. 2005-08
Editor:
Pennington The Electrochemical Society
Data de criação/publicação:
2005
Formato:
p. 538-547.
Idioma:
Inglês