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Ultra-Scaled AlOx Diffusion Barriers for Multibit HfOx RRAM Operation

Persson, Karl-Magnus ; Ram, Mamidala Saketh ; Wernersson, Lars-Erik

IEEE journal of the Electron Devices Society, 2021-01, Vol.9, p.564-569 [Periódico revisado por pares]

New York: IEEE

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Título:
Ultra-Scaled AlOx Diffusion Barriers for Multibit HfOx RRAM Operation
Autor: Persson, Karl-Magnus ; Ram, Mamidala Saketh ; Wernersson, Lars-Erik
Assuntos: Al₂O ; Annan elektroteknik och elektronik ; Condensed Matter Physics ; Den kondenserade materiens fysik ; diffusion barrier ; Diffusion barriers ; Electric potential ; Electrical Engineering, Electronic Engineering, Information Engineering ; Electrodes ; Elektroteknik och elektronik ; Engineering and Technology ; Fatigue limit ; Fysik ; Hafnium oxide ; HfO ; Integrated circuits ; multibit ; Natural Sciences ; Naturvetenskap ; Optical switches ; Other Electrical Engineering, Electronic Engineering, Information Engineering ; Physical Sciences ; Random access memory ; Resistance ; Resistors ; RRAM ; Selectors ; Switching ; Teknik ; Transistors ; Very large scale integration ; Voltage
É parte de: IEEE journal of the Electron Devices Society, 2021-01, Vol.9, p.564-569
Descrição: For dense very large scale integration (VLSI) of high performance, multibit resistive memory (RRAM), scalability of material dimensions, as well as the operational sensitivity of the RRAM to voltage fluctuations, have to be considered. This report presents the benefits of adding 0.5-nm thick AlO x diffusion barriers at the different electrode interfaces of HfO x . It is found that implementing AlO x -layers at both the bottom and the top electrode interface enables a tight control of the oxygen vacancy filament, resulting in low switching voltages and significantly improving switching endurance up to 10 6 cycles using a performance limiting resistor compliance. It is also shown that the filament in its low resistive state (<inline-formula> <tex-math notation="LaTeX">{R} _{\mathrm{ LRS}} </tex-math></inline-formula>) can be linearly reduced and enlarged at levels compatible to the conduction limitations of scaled selectors using an external 1T1R transistor compliance. With selector controlled resistance modulation, the <inline-formula> <tex-math notation="LaTeX">{R} _{\mathrm{ LRS}} </tex-math></inline-formula> becomes independent of the magnitude of the programming voltage and thus less sensitive to losses throughout a large memory array.
Editor: New York: IEEE
Idioma: Inglês

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Ultra-Scaled AlOx Diffusion Barriers for Multibit HfOx RRAM Operation

Persson, Karl-Magnus ; Ram, Mamidala Saketh ; Wernersson, Lars-Erik

New York: IEEE

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