Anomalous I versus V characteristics of InGaAs/InAlAs strained multiple quantum well structures for amplitude modulators

Pires, M P ; Guastavino, F ; Yavich, B ; Souza, P L

Semiconductor science and technology, 2003-08, Vol.18 (8), p.729-732 [Periódico revisado por pares]

Bristol: IOP Publishing

Texto completo disponível